We provide low-cost triple-junction GaAs solar cells, CICs, and solar panels for satellite and constellation applications. Our product has an established upright lattice-matched structure, which exhibits excellent radiation resistance and a high efficiency of 30% under the AM0 test condition, which has been verified by in-orbit flight experiences.

Key Features:

- Structure: GaInP/GaAs/Ge

- Size: 40.0mm*80.0mm, 60.0mm*120.0mm, 67.0mm*138.0mm, customization supported 

- Thickness: 150±20μm or 180±20μm

- Weight: ≤86mg/cm2 or 110mg/cm2

- BOL efficiency: 30%, EOL efficiency: 5E14: 27%, 1E15:25.8%

- Max output power: 2.45V and 16.6mA/cm2

- Bypass diodes included in CIC module

This flexible silicon-based solar cell solution is based on PERC technology, with a conversion efficiency of not less than 20% (AM0, 25°C). The cost is reduced by an order of magnitude compared with the triple-junction gallium arsenide solar array. It is designed to be reinforced according to the characteristics of the LEO (Low Earth Orbit) orbit. The ultra-thin flexible wing is used to reduce the weight, and it can be deployed and retracted through a scissor-type deployment mechanism. It is suitable for low-cost communication satellites.

Key Features:

- PERC technology

- Size: 30.0mm*40.0mm, 40.0mm*80.0mm, customization supported 

- Thickness: 110±10μm

- BOL efficiency: 20%(AM0, 25℃)

- Max output power: 695mV and 50mA/cm2

- Flexible substrate and packaging film

Heterojunction Back Contact Silicon solar cells (BC), specifically developed for near-space applications. Both the positive and negative electrodes are placed on the back side, which increases the sunlight absorption area and reduces optical losses. A back surface field is constructed to lower the recombination rate on the back side, thereby enhancing the performance. It has the advantages of high efficiency, high stability, no Light Induced Degradation (LID), no Potential Induced Degradation (PID), low temperature coefficient, and resulting in high power generation.

Key Features:

- Heterojunction technology

- Size: 156mm*156mm, customization supported 

- Thickness: 140±10μm

- BOL efficiency: Higher than 27%(AM1.5, 25℃)

- Maximum output power: 6.8W

- No Light Induced Degradation (LID), no Potential Induced Degradation (PID)

Email: marketing@enchampion.com